All-Electrical Measurement of the Density of States in (Ga,Mn)As

D. Neumaier, M. Turek, U. Wurstbauer, A. Vogl, M. Utz, W. Wegscheider, and D. Weiss
Phys. Rev. Lett. 103, 087203 – Published 19 August 2009

Abstract

We report on electrical measurements of the effective density of states in the ferromagnetic semiconductor material (Ga,Mn)As. By analyzing the conductivity correction to an enhanced electron-electron interaction the electrical diffusion constant was extracted for (Ga,Mn)As samples of different dimensionality. Using the Einstein relation allows us to deduce the effective density of states of (Ga,Mn)As at the Fermi energy.

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  • Received 16 February 2009

DOI:https://doi.org/10.1103/PhysRevLett.103.087203

©2009 American Physical Society

Authors & Affiliations

D. Neumaier*, M. Turek, U. Wurstbauer, A. Vogl, M. Utz, W. Wegscheider§, and D. Weiss

  • Institut für Experimentelle und Angewandte Physik, University of Regensburg, Germany

  • *neumaier@amo.de; Present address: AMO GmbH, Aachen, Germany
  • Present address: Fraunhofer CSP, Halle, Germany
  • Present address: Institut für Angewandte Physik, University of Hamburg, Germany
  • §Present address: Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland

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Issue

Vol. 103, Iss. 8 — 21 August 2009

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