Quantum wave function engineering of dopant-based Si nanostructures reveals new physics in the solid state, and is expected to play a vital role in future nanoelectronics. Central to any fundamental understanding or application is the ability to accurately characterize the deformation of the electron wave functions in these atom-based structures through electric and magnetic field control. We present a method for mapping the subtle changes that occur in the electron wave function through the measurement of the hyperfine tensor probed by ${}^{29}\mathrm{Si}$ impurities. We calculate Stark parameters for six shells around the donor. Our results show that detecting the donor electron wave function deformation is possible with resolution at the sub-Bohr radius level.

• Received 13 February 2009

DOI:https://doi.org/10.1103/PhysRevLett.103.106802