Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si/SiO2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance

Felix Hoehne, Hans Huebl, Bastian Galler, Martin Stutzmann, and Martin S. Brandt
Phys. Rev. Lett. 104, 046402 – Published 27 January 2010

Abstract

We investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Via a multifrequency pump-probe experiment in pulsed electrically detected magnetic resonance, we demonstrate that the dominant spin-dependent recombination transition occurs between phosphorus donors and Si/SiO2 interface states. Combining pulses at different microwave frequencies allows us to selectively address the two spin subsystems participating in the recombination process and to coherently manipulate and detect the relative spin orientation of the two recombination partners.

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  • Received 21 August 2009

DOI:https://doi.org/10.1103/PhysRevLett.104.046402

©2010 American Physical Society

Authors & Affiliations

Felix Hoehne*, Hans Huebl, Bastian Galler, Martin Stutzmann, and Martin S. Brandt

  • Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany

  • *Corresponding author: hoehne@wsi.tum.de
  • Present address: Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Strasse 8, 85748 Garching, Germany.

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Issue

Vol. 104, Iss. 4 — 29 January 2010

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