Delocalized Oxygen as the Origin of Two-Level Defects in Josephson Junctions

Timothy C. DuBois, Manolo C. Per, Salvy P. Russo, and Jared H. Cole
Phys. Rev. Lett. 110, 077002 – Published 12 February 2013; Erratum Phys. Rev. Lett. 113, 029901 (2014)
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Abstract

One of the key problems facing superconducting qubits and other Josephson junction devices is the decohering effects of bistable material defects. Although a variety of phenomenological models exist, the true microscopic origin of these defects remains elusive. For the first time we show that these defects may arise from delocalization of the atomic position of the oxygen in the oxide forming the Josephson junction barrier. Using a microscopic model, we compute experimentally observable parameters for phase qubits. Such defects are charge neutral but have nonzero response to both applied electric field and strain. This may explain the observed long coherence time of two-level defects in the presence of charge noise, while still coupling to the junction electric field and substrate phonons.

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  • Received 7 September 2012

DOI:https://doi.org/10.1103/PhysRevLett.110.077002

© 2013 American Physical Society

Erratum

Erratum: Delocalized Oxygen as the Origin of Two-Level Defects in Josephson Junctions [Phys. Rev. Lett. 110, 077002 (2013)]

Timothy C. DuBois, Manolo C. Per, Salvy P. Russo, and Jared H. Cole
Phys. Rev. Lett. 113, 029901 (2014)

Authors & Affiliations

Timothy C. DuBois1, Manolo C. Per1,2, Salvy P. Russo1, and Jared H. Cole1

  • 1Chemical and Quantum Physics, School of Applied Sciences, RMIT University, Melbourne, Victoria 3001, Australia
  • 2Virtual Nanoscience Laboratory, CSIRO Materials Science and Engineering, Parkville, Victoria 3052, Australia

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Issue

Vol. 110, Iss. 7 — 15 February 2013

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