Silicon Reactivity at the Ag(111) Surface

Mauro Satta, Stefano Colonna, Roberto Flammini, Antonio Cricenti, and Fabio Ronci
Phys. Rev. Lett. 115, 026102 – Published 8 July 2015
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Abstract

The modelization of silicene on Ag(111) is generally based on the assumption of a complete immiscibility between silicon and silver. However, there are recent reports that growth occurs inside the first layer of the Ag(111) terraces rather than on top of them. Here, we report on a combined density functional theory and scanning tunneling microscopy study unveiling the basic exchange mechanism between Si and the topmost layer Ag atoms and modeling the nucleation process. Our findings demonstrate that a strong Si-Ag interaction must be considered to properly describe the Si/Ag(111) interface.

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  • Received 2 January 2015

DOI:https://doi.org/10.1103/PhysRevLett.115.026102

© 2015 American Physical Society

Authors & Affiliations

Mauro Satta1, Stefano Colonna2, Roberto Flammini2, Antonio Cricenti2, and Fabio Ronci2,*

  • 1CNR-Istituto per lo Studio dei Materiali Nanostrutturati, Dipartimento di Chimica, Università di Roma “La Sapienza”, P.le Aldo Moro 5, I-00185, Roma, Italy
  • 2CNR-Istituto di Struttura della Materia, Via Fosso del Cavaliere 100, I-00133 Roma, Italy

  • *fabio.ronci@ism.cnr.it

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Vol. 115, Iss. 2 — 10 July 2015

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