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Intrinsic Mechanism for Anisotropic Magnetoresistance and Experimental Confirmation in CoxFe1−x Single-Crystal Films

F. L. Zeng, Z. Y. Ren, Y. Li, J. Y. Zeng, M. W. Jia, J. Miao, A. Hoffmann, W. Zhang, Y. Z. Wu, and Z. Yuan
Phys. Rev. Lett. 125, 097201 – Published 24 August 2020
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    Abstract

    Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal CoxFe1−x alloys is strongly dependent on the current orientation and alloy concentration. An intrinsic mechanism for AMR is found to arise from the band crossing due to magnetization-dependent symmetry protection. These special k points can be shifted towards or away from the Fermi energy by varying the alloy composition and hence the exchange splitting, thus allowing AMR tunability. The prediction is confirmed by delicate transport measurements, which further reveal a reciprocal relationship of the longitudinal and transverse resistivities along different crystal axes.

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    • Received 18 January 2020
    • Revised 13 July 2020
    • Accepted 31 July 2020

    DOI:https://doi.org/10.1103/PhysRevLett.125.097201

    Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

    Published by the American Physical Society

    Physics Subject Headings (PhySH)

    1. Research Areas
    Anisotropic magnetoresistance
    1. Physical Systems
    Ferromagnets
    1. Techniques
    First-principles calculationsHall barResistivity measurements
    Condensed Matter, Materials & Applied Physics

    Authors & Affiliations

    F. L. Zeng1,*, Z. Y. Ren2,3,*, Y. Li4,5, J. Y. Zeng1, M. W. Jia1, J. Miao2, A. Hoffmann5,§, W. Zhang4,5, Y. Z. Wu1,6,†, and Z. Yuan3,‡

    • 1Department of Physics, State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
    • 2School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
    • 3Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing 100875, China
    • 4Department of Physics, Oakland University, Rochester, Michigan 48309, USA
    • 5Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
    • 6Shanghai Research Center for Quantum Sciences, Shanghai 201315, China

    • *These authors contributed equally.
    • †wuyizheng@fudan.edu.cn
    • ‡zyuan@bnu.edu.cn
    • §Present address: Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA.

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    Issue

    Vol. 125, Iss. 9 — 28 August 2020

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