High-Frequency Mechanical Excitation of a Silicon Nanostring with Piezoelectric Aluminum Nitride Layers

Alessandro Pitanti, Tapani Makkonen, Martin F. Colombano, Simone Zanotto, Leonardo Vicarelli, Marco Cecchini, Amadeu Griol, Daniel Navarro-Urrios, Clivia Sotomayor-Torres, Alejandro Martinez, and Jouni Ahopelto
Phys. Rev. Applied 14, 014054 – Published 17 July 2020; Erratum Phys. Rev. Applied 17, 039901 (2022)

Abstract

A strong trend for quantum-based technologies and applications follows the avenue of combining different platforms to exploit their complementary technological and functional advantages. Micro and nanomechanical devices are particularly suitable for hybrid integration due to the ease of fabrication at multiscales and their pervasive coupling with electrons and photons. Here, we report on a nanomechanical technological platform where a silicon chip is combined with an aluminum nitride layer. Exploiting the AlN piezoelectricity, surface acoustic waves (SAWs) are injected in the Si layer where the material has been locally patterned and etched to form a suspended nanostring. Characterizing the nanostring vertical displacement induced by the SAW, we find an external excitation peak efficiency in excess of 500 pm/V at 1-GHz mechanical frequency. Exploiting the long-term expertise in silicon photonic and electronic devices as well as the SAW robustness and versatility, our technological platform represents a candidate for hybrid quantum systems.

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  • Received 8 April 2020
  • Revised 29 May 2020
  • Accepted 15 June 2020

DOI:https://doi.org/10.1103/PhysRevApplied.14.014054

© 2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Erratum

Erratum: High-frequency mechanical excitation of a silicon nanostring with piezoelectric aluminum nitride layers [Phys. Rev. Applied 14, 014054 (2020)]

Alessandro Pitanti, Tapani Makkonen, Martin F. Colombano, Simone Zanotto, Leonardo Vicarelli, Marco Cecchini, Amadeu Griol, Daniel Navarro-Urrios, Clivia Sotomayor-Torres, Alejandro Martinez, and Jouni Ahopelto
Phys. Rev. Applied 17, 039901 (2022)

Authors & Affiliations

Alessandro Pitanti1,*, Tapani Makkonen2, Martin F. Colombano3,4, Simone Zanotto1, Leonardo Vicarelli1, Marco Cecchini1, Amadeu Griol5, Daniel Navarro-Urrios6, Clivia Sotomayor-Torres3,7, Alejandro Martinez5, and Jouni Ahopelto2

  • 1NEST Laboratory, CNR - Istituto di Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, Pisa 56217, Italy
  • 2VTT Technical Research Centre of Finland Ltd, P.O. Box 1000, Espoo, VTT FI-02044, Finland
  • 3Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona 08193, Spain
  • 4Departamento Física, Universidad Autònoma de Barcelona, Bellaterra, Barcelona 08193, Spain
  • 5Nanophotonics Technology Center, Universitat Politècnica de València, Spain
  • 6MIND-IN2UB, Departament d’Electrnica, Facultat de Físicas, Universitat de Barcelona, Martí i Franquès, 1, Barcelona 08028, Spain
  • 7Catalan Institute for Research and Advances Studies ICREA, Barcelona, Spain

  • *alessandro.pitanti@sns.it

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Vol. 14, Iss. 1 — July 2020

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