Cotunneling mechanism for all-electrical electron spin resonance of single adsorbed atoms

J. Reina Gálvez, C. Wolf, F. Delgado, and N. Lorente
Phys. Rev. B 100, 035411 – Published 9 July 2019

Abstract

The recent development of all-electrical electron spin resonance (ESR) in a scanning tunneling microscope (STM) setup has opened the door to vast applications. Despite the fast-growing number of experimental works on STM-ESR, the fundamental principles remain unclear. By using a cotunneling picture, we show that the spin resonance signal can be explained as a time-dependent variation of the tunnel barrier induced by the alternating electric driving field. We demonstrate how this variation translates into the resonant frequency response of the direct current. Our cotunneling theory explains the main experimental findings. Namely, the linear dependence of the Rabi flop rate with the alternating bias amplitude, the absence of resonant response for spin-unpolarized currents, and the weak dependence on the actual atomic species.

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  • Received 23 April 2019
  • Revised 7 June 2019

DOI:https://doi.org/10.1103/PhysRevB.100.035411

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

J. Reina Gálvez1, C. Wolf2,3, F. Delgado4,5,*, and N. Lorente1,5

  • 1Centro de Física de Materiales CFM/MPC (CSIC-UPV/EHU), Paseo Manuel de Lardizábal 5, 20018 Donostia-San Sebastián, Spain
  • 2Department of Physics, Ewha Womans University, Seoul 03760, Republic of Korea
  • 3Center for Quantum Nanoscience, Institute for Basic Science, Seoul 03760, Republic of Korea
  • 4Instituto de estudios avanzados IUDEA, Departamento de Física, Universidad de La Laguna, C/Astrofísico Francisco Sánchez, s/n. 38203, Tenerife, Spain
  • 5Donostia International Physics Center, Paseo Manuel de Lardizábal 4, 20018 Donostia-San Sebastián, Spain

  • *fernando.delgado@ull.edu.es

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Issue

Vol. 100, Iss. 3 — 15 July 2019

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