Enhanced room-temperature spin-valley coupling in V-doped MoS2

Krishna Rani Sahoo, Janmey Jay Panda, Sumit Bawari, Rahul Sharma, Dipak Maity, Ashique Lal, Raul Arenal, G. Rajalaksmi, and Tharangattu N. Narayanan
Phys. Rev. Materials 6, 085202 – Published 23 August 2022
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Abstract

Achieving room-temperature valley polarization in two-dimensional (2D) atomic layers (2D materials) by substitutional doping opens new avenues of applications. Here, monolayer MoS2, when doped with vanadium at low (0.1 atomic %) concentrations, is shown to exhibit high spin-valley coupling, and hence a high degree of valley polarization at room-temperature. The atomic layers of MoS2 (MS) and V-doped MoS2 (VMS) are grown via the chemical vapor deposition-assisted method. The formation of new energy states near the valence band is confirmed from band gap calculations and also from the density functional theory–based band structure analyses. Time-reversal symmetry broken energy shift in the equivalent valleys is predicted in VMS, and the room-temperature chirality-controlled photoluminescent (PL) excitation measurements indicate such a shift in valley exciton energies (∼35 meV). An enhanced valley polarization in VMS (∼42%) is observed in comparison to that in MS (<12%), while in MS, the chirality-controlled excitations did not show the difference in emission energies. Spin Hall effect of light–based optical rotation measurements indicate the asymmetric absorption among the two different chiralities of the incident light, hence supporting the existence of room-temperature valley polarization. This study opens possibilities of room-temperature opto-spintronics using stable 2D materials.

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  • Received 16 March 2022
  • Revised 24 June 2022
  • Accepted 11 August 2022

DOI:https://doi.org/10.1103/PhysRevMaterials.6.085202

©2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Krishna Rani Sahoo1, Janmey Jay Panda1, Sumit Bawari1, Rahul Sharma1, Dipak Maity1, Ashique Lal1, Raul Arenal2,3,4, G. Rajalaksmi1, and Tharangattu N. Narayanan1,*

  • 1Tata Institute of Fundamental Research-Hyderabad, Sy. No. 36/P, Gopanapally Village, Serilingampally Mandal, Hyderabad-500046, India
  • 2Instituto de Nanociencia y Materiales de Aragon (INMA), Universidad de Zaragoza, 50009 Zaragoza, Spain
  • 3Laboratorio de Microscopias Avanzadas (LMA), Universidad de Zaragoza, 50018 Zaragoza, Spain
  • 4Fundación ARAID, 50018 Zaragoza, Spain

  • *tnn@tifrh.res.in

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Issue

Vol. 6, Iss. 8 — August 2022

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