3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> MOSFETs

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped --Ga2O3 MOSFETs | IEEE Journals & Magazine | IEEE Xplore