Paper
9 July 1992 Computational method for the correction of proximity effect in electron-beam lithography (Poster Paper)
Chih-Yuan Chang, Gerry Owen, Roger Fabian W. Pease, Thomas Kailath
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Abstract
Dose correction is commonly used to compensate for the proximity effect in electron lithography. The computation of the required dose modulation is usually carried out using 'self-consistent' algorithms that work by solving a large number of simultaneous linear equations. However, there are two major drawbacks: the resulting correction is not exact, and the computation time is excessively long. A computational scheme, as shown in Figure 1, has been devised to eliminate this problem by the deconvolution of the point spread function in the pattern domain. The method is iterative, based on a steepest descent algorithm. The scheme has been successfully tested on a simple pattern with a minimum feature size 0.5 micrometers , exposed on a MEBES tool at 10 KeV in 0.2 micrometers of PMMA resist on a silicon substrate.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chih-Yuan Chang, Gerry Owen, Roger Fabian W. Pease, and Thomas Kailath "Computational method for the correction of proximity effect in electron-beam lithography (Poster Paper)", Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); https://doi.org/10.1117/12.136024
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KEYWORDS
Lithography

Point spread functions

Deconvolution

Modulation

Polymethylmethacrylate

Scanning electron microscopy

Silicon

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