Long-wavelength quantum-well infrared detectors based on intersubband transitions in InGaAs/InP quantum wells

Jan Y. Andersson; Lennart Lundqvist; Z. F. Paska; Klaus P. Streubel; Johan Wallin

doi:10.1117/12.138964

5 January 1993 Long-wavelength quantum-well infrared detectors based on intersubband transitions in InGaAs/InP quantum wells

Jan Y. Andersson, Lennart Lundqvist, Z. F. Paska, Klaus P. Streubel, Johan Wallin

Author Affiliations +

Proceedings Volume 1762, Infrared Technology XVIII; (1993) https://doi.org/10.1117/12.138964
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

In_0.53Ga_0.47As/InP infrared detectors with peak absorption at a wavelength of 8.5 micrometers have been fabricated and tested. It is shown that very high current responsivities and high gain are obtained. It is found that gain increases drastically when approaching detector voltages close to -8.5 V, which is explained by carrier impact excitation of electrons from the QW ground state to the excited extended state. The detectivity D^* is about 1.2(DOT)10¹⁰ cm Hz^1/2 W^-1 at 80 K for a 45 degree(s) polished edge detector assuming unpolarized radiation. Grating coupling is studied by etching crossed gratings into the upper part of the mesas. The increase in responsivity as compared to a polished edge detector is by a factor of 2.5 to 3, irrespective to mesa sizes 500 X 500 or 150 X 150 micrometers ². This gives a corresponding detectivity of (3 - 3.5)(DOT)10¹⁰ cm Hz^1/2 W^-1 at 80 K for unpolarized radiation.

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Jan Y. Andersson, Lennart Lundqvist, Z. F. Paska, Klaus P. Streubel, and Johan Wallin "Long-wavelength quantum-well infrared detectors based on intersubband transitions in InGaAs/InP quantum wells", Proc. SPIE 1762, Infrared Technology XVIII, (5 January 1993); https://doi.org/10.1117/12.138964

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