170-nm gates fabricated by phase-shift mask and top antireflector process

Timothy A. Brunner; Pia N. Sanda; M. Wordeman; Tom Lii

doi:10.1117/12.150423

8 August 1993 170-nm gates fabricated by phase-shift mask and top antireflector process

Timothy A. Brunner, Pia N. Sanda, M. Wordeman, Tom Lii

Proceedings Volume 1927, Optical/Laser Microlithography; (1993) https://doi.org/10.1117/12.150423
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

N-channel field effect transistors (FETs) with poly linewidths as small as 170 nm have been fabricated with phase shift mask (PSM) lithography using a 0.45 NA I-line stepper. Narrow poly lines were defined using the edge of a (pi) shifter rectangle with superimposed chrome lines of variable width to produce a range of linewidths. Using a chrome-less phase edge, resist linewidths of 240 nm were obtained at nominal exposure, while + 25% overexposure yielded linewidths of 190 nm. Excellent linewidth control was obtained on the device wafers with 3 (sigma) variation of roughly 20 nm for the resist lines. The use of a top anti-reflector (TAR) process improved linewidth control by approximately 35% relative to a normal single layer resist process. Linewidths were also measured after poly etch and, in the final devices, L_eff was measured by electrical testing. Devices fabricated using PSM showed significant improvement in lithographic process latitude over control devices fabricated using conventional chrome masks.

Citation Download Citation

Timothy A. Brunner, Pia N. Sanda, M. Wordeman, and Tom Lii "170-nm gates fabricated by phase-shift mask and top antireflector process", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150423

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