Interfaces in crystalline materials

F. Flores; R. Saiz-Pardo; R. Rincon

doi:10.1117/12.190787

26 October 1994 Interfaces in crystalline materials

F. Flores, R. Saiz-Pardo, R. Rincon

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190787
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

A brief review of the theoretical state of the art in the field of semiconductor interfaces is presented. It is shown that the important factor controlling the different semiconductor barrier heights is the density of states associated with the semiconductor dangling-bonds. passivated semiconductor surfaces present saturated dangling-bonds and have modified barrier heights. Results for hydrogen-passivated GaAs (110)-surfaces are presented; it is shown that the Schottky-barrier height formed by the deposition of a K-layer is sustantially changed by the hydrogen-passivation.

Citation Download Citation

F. Flores, R. Saiz-Pardo, and R. Rincon "Interfaces in crystalline materials", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190787

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