Confinement-factor measurement in laser diodes by absorption-loss modulation with injected carriers

C. D. Cengher; Aurel M. Vlaicu; Gheorghe Iordache; Iulian B. Petrescu-Prahova

doi:10.1117/12.203503

8 March 1995 Confinement-factor measurement in laser diodes by absorption-loss modulation with injected carriers

C. D. Cengher, Aurel M. Vlaicu, Gheorghe Iordache, Iulian B. Petrescu-Prahova

Proceedings Volume 2461, ROMOPTO '94: Fourth Conference in Optics; (1995) https://doi.org/10.1117/12.203503
Event: ROMOPTO '94: 4th Conference on Optics, 1994, Bucharest, Romania

Abstract

Designing of laser diodes needs waveguide parameter optimization and testing. In order to maximize the emitted power of a laser diode an important design parameter is the optical confinement factor (Gamma) of the active region and the reduced confinement factor g equals G/d, where d is the active region thickness. This paper presents a measurement method of the reduced confinement factor by correlating changes in absorption loss with the current density of injected free carriers, for a LPE fabricated double heterostructure single quantum well laser diode with the active region thickness of about 0.1 micrometers . A reduced confinement factor of 8.5 10^-2 micrometers ^-1 and waveguide absorption coefficient of 1.8 cm^-1 of the laser diode are reported.

Citation Download Citation

C. D. Cengher, Aurel M. Vlaicu, Gheorghe Iordache, and Iulian B. Petrescu-Prahova "Confinement-factor measurement in laser diodes by absorption-loss modulation with injected carriers", Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); https://doi.org/10.1117/12.203503

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