[beta]-Ga2O3 and single-crystal phosphors for high-brightness white LEDs and LDs, and [beta]-Ga2O3 potential for next generation of power devices

Encarnación Garcia Víllora; Stelian Arjoca; Kiyoshi Shimamura; Daisuke Inomata; Kazuo Aoki

doi:10.1117/12.2039305

8 March 2014 β-Ga₂O₃ and single-crystal phosphors for high-brightness white LEDs and LDs, and β-Ga₂O₃ potential for next generation of power devices

Encarnación Garcia Víllora, Stelian Arjoca, Kiyoshi Shimamura, Daisuke Inomata, Kazuo Aoki

Author Affiliations +

Proceedings Volume 8987, Oxide-based Materials and Devices V; 89871U (2014) https://doi.org/10.1117/12.2039305
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

β-Ga₂O₃ is the most transparent conductive oxide, well known since several decades for its large bandgap of 4.8 eV. Its potential as semiconductor material, however, is just emerging in recent years. Present work shows the development of βGa₂O₃ for semiconductor applications and its current state-of-the-art. The discussion is focused on three different aspects: (1) Advantageous growth from melt of large-size β-Ga₂O₃single-crystals. High-crystalline quality and carrier control make possible the production of conductive and semi-insulating wafers. (2) β-Ga₂O₃as substrate for homoepitaxy as well as for heteroepitaxial deposition of GaN-based devices. High-brightness blue-LEDs with vertical current injection are demonstrated. (3) Potential of β-Ga₂O₃for high-power devices with higher breakdown voltage than GaN and SiC counterparts. The first Schottky barrier diode is shown, as well as first transistors (MESFET and MOSFET) are indicated. Single-crystal phosphors are introduced as novel alternative to currently used powder phosphors. In connection with high-brightness white light-sources, based on LEDs or LDs plus phosphor converters, single-crystal phosphors possess advantageous features. These avoid the use of resins and exhibit a very high internal quantum efficiency, which remains stable with the temperature increase.

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Encarnación Garcia Víllora, Stelian Arjoca, Kiyoshi Shimamura, Daisuke Inomata, and Kazuo Aoki "β-Ga₂O₃ and single-crystal phosphors for high-brightness white LEDs and LDs, and β-Ga₂O₃ potential for next generation of power devices", Proc. SPIE 8987, Oxide-based Materials and Devices V, 89871U (8 March 2014); https://doi.org/10.1117/12.2039305

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