Gas-phase silicon micromachining with xenon difluoride

Floy I. Chang; Richard Yeh; Gisela Lin; Patrick B. Chu; Eric G. Hoffman; Ezekiel J. Kruglick; Kristofer S. J. Pister; Michael H. Hecht

doi:10.1117/12.220933

13 September 1995 Gas-phase silicon micromachining with xenon difluoride

Floy I. Chang, Richard Yeh, Gisela Lin, Patrick B. Chu, Eric G. Hoffman, Ezekiel J. Kruglick, Kristofer S. J. Pister, Michael H. Hecht

Author Affiliations +

Proceedings Volume 2641, Microelectronic Structures and Microelectromechanical Devices for Optical Processing and Multimedia Applications; (1995) https://doi.org/10.1117/12.220933
Event: Micromachining and Microfabrication, 1995, Austin, TX, United States

Abstract

Xenon difluoride is a gas phase, room temperature, isotropic silicon etchant with extremely high selectivity to many materials commonly used in microelectromechancial systems, including photoresists, aluminum, and silicon dioxide. Using a simple vacuum system, the effects of etch aperture and loading were explored for etches between 10 and 200 micrometers . Etch rates as high as 40 micrometers /minute were observed. Initial characteriation of wafer surface temperature during the etch indicates tens of degrees of self-heating, which is known to cause substantial decrease in etch rate.

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Floy I. Chang, Richard Yeh, Gisela Lin, Patrick B. Chu, Eric G. Hoffman, Ezekiel J. Kruglick, Kristofer S. J. Pister, and Michael H. Hecht "Gas-phase silicon micromachining with xenon difluoride", Proc. SPIE 2641, Microelectronic Structures and Microelectromechanical Devices for Optical Processing and Multimedia Applications, (13 September 1995); https://doi.org/10.1117/12.220933

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