15 ps cryogenic operation of 0.19-um-LG n+ - p+ double-gate SOI CMOS

Toshihiro Sugii; Tetsu Tanaka; Hiroshi Horie; Kunihiro Suzuki

doi:10.1117/12.221150

15 September 1995 15 ps cryogenic operation of 0.19-μm-LG n⁺- p⁺double-gate SOI CMOS

Toshihiro Sugii, Tetsu Tanaka, Hiroshi Horie, Kunihiro Suzuki

Proceedings Volume 2636, Microelectronic Device and Multilevel Interconnection Technology; (1995) https://doi.org/10.1117/12.221150
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

We demonstrated a CMOS invertor with a 15 ps propagation delay (t_pd) at 77 K. This device uses n⁺ - p⁺ double-gate SOI MOSFETs with a gate length (L_G) of 0.19 micrometers and a gate oxide thickness (t_ox) around 9 nm. The channel doping concentration of this device is maintained as low as 10¹⁵ cm^-3 even in the deep submicron gate length regime while maintaining short channel immunity. Therefore, the decreased phonon scattering due to the cryogenic operation causes a significant increase in mobility, which leads to smaller t_pd than any other reported values for a given L_G. Although the threshold voltage (V_th) increases with a decrease in temperature, we can adjust it for cryogenic operation by controlling t_ox and the SOI thicknesses (t_Si).

Citation Download Citation

Toshihiro Sugii, Tetsu Tanaka, Hiroshi Horie, and Kunihiro Suzuki "15 ps cryogenic operation of 0.19-μm-LG n⁺- p⁺double-gate SOI CMOS", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); https://doi.org/10.1117/12.221150

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