Diffusion doped p-i-n/p-n diodes for scalable silicon photonics devices

Riddhi Nandi; Sreevatsa Kurudi; Bijoy Krishna Das

doi:10.1117/12.2265267

30 May 2017 Diffusion doped p-i-n/p-n diodes for scalable silicon photonics devices

Riddhi Nandi, Sreevatsa Kurudi, Bijoy Krishna Das

Proceedings Volume 10249, Integrated Photonics: Materials, Devices, and Applications IV; 102490Q (2017) https://doi.org/10.1117/12.2265267
Event: SPIE Microtechnologies, 2017, Barcelona, Spain

Abstract

Diffusion doped p-i-n/p-n diodes in SOI substrate is proposed for the fabrication of active silicon photonics devices with scalable waveguide cross-sections. The p-type and n-type diffusion doping parameters are optimized for the fabrication of tunable single-mode waveguide phase-shifters with microns to submicron cross-sectional dimensions. The simulations results show that the shape of depletion layer can be effectively engineered by suitably positioning the rib waveguide with respect to the gap between doping windows. We could thus introduce an additional control parameter to optimize over-all figure of merits of the phase-shifter for various applications. For an optimized set of diffusion parameters, the V_πL_π of single-mode waveguides designed with 1μm, 0.5μm, and 0.25μm device layers (under reverse bias operating in TE-polarization at λ ~ 1550 nm) are found as 2.7 V-cm, 2.1 V-cm, and 1.6 V-cm, respectively. The typical p-n junction capacitance of an optimized 0.25μm single-mode waveguide is estimated to be < 0.5 fF/μm, which is comparable to that of ion-implanted p-n waveguide junctions.

Citation Download Citation

Riddhi Nandi, Sreevatsa Kurudi, and Bijoy Krishna Das "Diffusion doped p-i-n/p-n diodes for scalable silicon photonics devices", Proc. SPIE 10249, Integrated Photonics: Materials, Devices, and Applications IV, 102490Q (30 May 2017); https://doi.org/10.1117/12.2265267

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