Presentation + Paper
12 October 2020 Effects of the illumination NA on EUV mask inspection with coherent diffraction imaging
Author Affiliations +
Abstract
RESCAN is a coherent diffraction imaging based APMI microscope prototype. A complex image of the EUV reticle is reconstructed from diffraction patterns collected on a CCD detector. With the next upgrade of the tool, the resolution will be enhanced from the current 34 nm down to 20 nm on mask. Also the illumination NA value will change from the current range of 0.002 to 0.02 to a value of 0.035. Here, we study how a change of the illumination NA affects the EUV mask inspection in simulation. We observe a better image quality, lower object error and higher defect sensitivity with increasing illumination NA.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ricarda Nebling, Hyun-su Kim, Uldis Locans, Atoosa Dejkameh, Yasin Ekinci, and Iacopo Mochi "Effects of the illumination NA on EUV mask inspection with coherent diffraction imaging", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 115170W (12 October 2020); https://doi.org/10.1117/12.2573181
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KEYWORDS
Photomasks

Extreme ultraviolet

Inspection

Coherence imaging

Lithographic illumination

Defect detection

Diffraction

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