Presentation
5 March 2021 Behaviors of vacancy-type defects in Mg-implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
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Abstract
Vacancies in Mg-implanted GaN were probed using positron annihilation technique. Mg was implanted into GaN with [Mg] = 1E19 /cm3. For an as-implanted sample, the major defect species was identified as Ga-vacancy related defects. The sample was annealed under a nitrogen pressure of 1 GPa in a temperature range of 1000–1480C without a protective capping layer. Comparing with the sample annealed with the capping layer, although no large difference in the defect spices was observed, their concentration was decreased by the cap-less annealing. The diffusion of Mg during annealing was influenced by the presence of residual vacancies. H was unintentionally incorporated into the sample during annealing, and its diffusion property were also affected by vacancies and Mg. A part of this work was supported by MEXT “Research and development of next-generation semiconductor to realize energy-saving society (JPJ005357)” and the Polish National Science Centre through project No 2018/29/B/ST5/00338.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Uedono, H. Sakurai, T. Narita, K. Sierakowski, M. Bockowski, J. Suda, S. Ishibashi, S. F. Chichibu, and T. Kachi "Behaviors of vacancy-type defects in Mg-implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861P (5 March 2021); https://doi.org/10.1117/12.2575972
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Cited by 1 scholarly publication.
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KEYWORDS
Annealing

Gallium nitride

Magnesium

Aluminum nitride

Doping

Ion implantation

Ions

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