Presentation + Paper
5 March 2022 1D photonic crystal GeSn-on-insulator nanobeam laser
Author Affiliations +
Proceedings Volume 12006, Silicon Photonics XVII; 120060L (2022) https://doi.org/10.1117/12.2608589
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
GeSn alloys have emerged as a promising material for realizing CMOS-compatible light sources. GeSn lasers demonstrated to date have large device footprints and active areas, which limit the realization of densely integrated lasers operating at low power consumption. Thanks to their intrinsically small device form factors, 1D photonic crystal lasers may offer opportunities to overcome such limitations of large GeSn lasers. Here, we present a 1D photonic crystal nanobeam laser with a very small device footprint (~7 μm2) and a compact active area (~1.2 μm2) on a GeSn-on-insulator substrate.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hyo-Jun Joo, Youngmin Kim, Daniel Burt, Yongduck Jung, Lin Zhang, Melvina Chen, Samuel Jior Parluhutan, Dong-Ho Kang, Chulwon Lee, Simone Assali, Zoran Ikonic, Oussama Moutanabbir, Yong-Hoon Cho, Chuan Seng Tan, and Donguk Nam "1D photonic crystal GeSn-on-insulator nanobeam laser", Proc. SPIE 12006, Silicon Photonics XVII, 120060L (5 March 2022); https://doi.org/10.1117/12.2608589
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KEYWORDS
Photonic crystals

Raman spectroscopy

Photonic integrated circuits

Tin

Germanium

Scanning electron microscopy

Silicon

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