Photoluminescence decay in porous silicon films

I. Baltog; M. L. Ciurea; Gabriela Pavelescu; L. Mihut; M. Baibarac

doi:10.1117/12.312818

2 July 1998 Photoluminescence decay in porous silicon films

I. Baltog, M. L. Ciurea, Gabriela Pavelescu, L. Mihut, M. Baibarac

Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998) https://doi.org/10.1117/12.312818
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania

Abstract

The photoluminescence (PL) decay measurements were performed on porous silicon films. It was observed that the two components of PL, one of them fast (ns) and the other slow (microsecond(s) or ms sometimes) have different contributions to PL signal, depending on the wavelength of the excitation light. The slow component of PL was in details investigated. Time decay cures for different excitation (337.1 nm, 470 nm, and 550 nm) and emission (550, 650, 700, 800 and 860 nm) wavelengths and also for different excitation intensities were taken. All decay curves were fitted with a stretched exponential. The slow component of PL was proposed to be attributed to the radiative recombination on surfaces.

Citation Download Citation

I. Baltog, M. L. Ciurea, Gabriela Pavelescu, L. Mihut, and M. Baibarac "Photoluminescence decay in porous silicon films", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); https://doi.org/10.1117/12.312818

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