Extension of KrF lithography to sub-50-nm pattern formation

Shuji Nakao; Jiroh Itoh; Akihiro Nakae; Itaru Kanai; Takayiki Saitoh; Hirosi Matsubara; Kouichirou Tsujita; Ichiriou Arimoto; Wataru Wakamiya

doi:10.1117/12.389025

5 July 2000 Extension of KrF lithography to sub-50-nm pattern formation

Shuji Nakao, Jiroh Itoh, Akihiro Nakae, Itaru Kanai, Takayiki Saitoh, Hirosi Matsubara, Kouichirou Tsujita, Ichiriou Arimoto, Wataru Wakamiya

Author Affiliations +

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.389025
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Sub-50 nm isolated line pattern is successfully formed by KrF lithography with DOF larger than 0.5 micrometers . This is performed by using a phase edge type phase shift mask, a special photo resist and a partial dry ashing process. Because all of these elemental techniques currently becomes mature, this method is one of promising candidates for sub- 50 nm isolated line pattern formation. As a conclusion, we consider KrF lithography can be extended to sub-50 nm high speed logic node.

Citation Download Citation

Shuji Nakao, Jiroh Itoh, Akihiro Nakae, Itaru Kanai, Takayiki Saitoh, Hirosi Matsubara, Kouichirou Tsujita, Ichiriou Arimoto, and Wataru Wakamiya "Extension of KrF lithography to sub-50-nm pattern formation", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389025

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