Wide-bandgap III-nitride semiconductors: opportunities for future optoelectronics

Yoon-Soo Park

doi:10.1117/12.425448

17 April 2001 Wide-bandgap III-nitride semiconductors: opportunities for future optoelectronics

Yoon-Soo Park

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425448
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

The world at the end of the 20th Century has become blue. Indeed, this past decade has witnessed a blue rush towards the development of violet-blue-green light emitting diodes (LEDs) and laser diodes (LDs) based on wide band gap III-nitride semiconductors. And the hard work has culminated with, first, the demonstration of commercial high brightness blue and green LEDs and of commercial violet LDs, at the very end of this decade. Thanks to their extraordinary properties, these semiconductor materials have generated a plethora of activity in semiconductor science and technology. Novel approaches are explored daily to improve the current optoelectronics state-of- the-art. Such improvements will extend the usage and the efficiency of new light sources (e.g. white LEDs), support the rising information technology age (e.g. high density optical data storage), and enhance the environmental awareness capabilities of humans (ultraviolet and visible photon detectors and sensors). Such opportunities and many others will be reviewed in this presentation.

Citation Download Citation

Yoon-Soo Park "Wide-bandgap III-nitride semiconductors: opportunities for future optoelectronics", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425448

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