Lithographic evaluation of the EUV engineering test stand

Sang Hun Lee; Daniel A. Tichenor; William P. Ballard; Luis J. Bernardez II; John E. M. Goldsmith; Steven J. Haney; Karen L. Jefferson; Terry A. Johnson; Alvin H. Leung; Donna J. O'Connell; William C. Replogle; John B. Wronosky; Kenneth L. Blaedel; Patrick P. Naulleau; Kenneth A. Goldberg; Eric M. Gullikson; Henry N. Chapman; Stefan Wurm; Eric M. Panning; Pei-yang Yan; Guojing Zhang; John E. Bjorkholm; Glenn D. Kubiak; Donald W. Sweeney; David T. Attwood Jr.; Charles W. Gwyn

doi:10.1117/12.472300

1 July 2002 Lithographic evaluation of the EUV engineering test stand

Sang Hun Lee, Daniel A. Tichenor, William P. Ballard, Luis J. Bernardez II, John E. M. Goldsmith, Steven J. Haney, Karen L. Jefferson, Terry A. Johnson, Alvin H. Leung, Donna J. O'Connell, William C. Replogle, John B. Wronosky, Kenneth L. Blaedel, Patrick P. Naulleau, Kenneth A. Goldberg, Eric M. Gullikson, Henry N. Chapman, Stefan Wurm, Eric M. Panning, Pei-yang Yan, Guojing Zhang, John E. Bjorkholm, Glenn D. Kubiak, Donald W. Sweeney, David T. Attwood Jr., Charles W. Gwyn

Author Affiliations +

Proceedings Volume 4688, Emerging Lithographic Technologies VI; (2002) https://doi.org/10.1117/12.472300
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Static and scanned images of 100 nm dense features were successfully obtained with a developmental set of projection optics and a 500W drive laser laser-produced-plasma (LPP) source in the Engineering Test Stand (ETS). The ETS, configured with POB1, has been used to understand system performance and acquire lithographic learning which will be used in the development of EUV high volume manufacturing tools. The printed static images for dense features below 100 nm with the improved LPP source are comparable to those obtained with the low power LPP source, while the exposure time was decreased by more than 30x. Image quality comparisons between the static and scanned images with the improved LPP source are also presented. Lithographic evaluation of the ETS includes flare and contrast measurements. By using a resist clearing method, the flare and aerial image contrast of POB1 have been measured, and the results have been compared to analytical calculations and computer simulations.

Citation Download Citation

Sang Hun Lee, Daniel A. Tichenor, William P. Ballard, Luis J. Bernardez II, John E. M. Goldsmith, Steven J. Haney, Karen L. Jefferson, Terry A. Johnson, Alvin H. Leung, Donna J. O'Connell, William C. Replogle, John B. Wronosky, Kenneth L. Blaedel, Patrick P. Naulleau, Kenneth A. Goldberg, Eric M. Gullikson, Henry N. Chapman, Stefan Wurm, Eric M. Panning, Pei-yang Yan, Guojing Zhang, John E. Bjorkholm, Glenn D. Kubiak, Donald W. Sweeney, David T. Attwood Jr., and Charles W. Gwyn "Lithographic evaluation of the EUV engineering test stand", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); https://doi.org/10.1117/12.472300

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available