Properties of a 248-nm DUV laser mask pattern generator for the 90-nm and 65-nm technology nodes

Johan Aman; Hans A. Fosshaug; Tobias Hedqvist; Jan Harkesjo; Peter Hogfeldt; Marie Jacobsson; Andrzej Karawajczyk; Johan Karlsson; Mats Rosling; Henrik J. Sjoberg

doi:10.1117/12.519970

17 December 2003 Properties of a 248-nm DUV laser mask pattern generator for the 90-nm and 65-nm technology nodes

Johan Aman, Hans A. Fosshaug, Tobias Hedqvist, Jan Harkesjo, Peter Hogfeldt, Marie Jacobsson, Andrzej Karawajczyk, Johan Karlsson, Mats Rosling, Henrik J. Sjoberg

Author Affiliations +

Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.519970
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

This paper presents the properties of a second-generation DUV laser pattern generator based on spatial light modulator technology and designed to meet the requirements of the 90-nm to 65-nm technology nodes. The system, named Sigma7300, is described and major changes compared to its predecessor are pointed out. These changes result in improved pattern accuracy and fidelity as well as system reliability and maintenance. This improved performance is accompanied with greatly reduced writing times of typically 3 Hrs. per mask. Performance data is presented that shows the system meets the resolution requirement of 260 nm with CD linearity of 10 nm and assist line resolution of 140 nm. CD uniformity data and registration data are also presented that indicates that the system meets the requirements for most layers at the 90-nm and 65-nm nodes.

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Johan Aman, Hans A. Fosshaug, Tobias Hedqvist, Jan Harkesjo, Peter Hogfeldt, Marie Jacobsson, Andrzej Karawajczyk, Johan Karlsson, Mats Rosling, and Henrik J. Sjoberg "Properties of a 248-nm DUV laser mask pattern generator for the 90-nm and 65-nm technology nodes", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.519970

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