Paper
8 September 2004 Detection of lateral spontaneous emission for VCSEL monitoring
Charlotte Bringer, Veronique Bardinal, Emmanuelle Daran, Thierry Camps, Yann G. Boucher, Guilhem Almuneau, Olivier Gauthier-Lafaye, Pascal Dubreuil, Jean-Baptiste Doucet, Chantal Fontaine
Author Affiliations +
Abstract
VCSELs (Vertical Cavity Surface Emitting Lasers) are nowadays more and more exploited in optoelectronic applications, monitoring their lasing power in a compact and low cost manner becomes crucial. To collect and control the output light, an external photodetector associated with an optical microlens array can be used. Integrated solutions based on the use of a bulk or QW photodetection section added in single-or double-cavity structures have also been proposed. Here, we have investigated a simpler solution based on a standard VCSEL array. Light emitted by a VCSEL has been electrically detected by adjacent VCSELs located in the same array, using in plane optical waveguiding of spontaneous emission in the intrinsic central zone of the devices. We show that the detected photocurrent can be related to the power of the emitting VCSEL. Signal intensity has been studied as a function of VCSELs distance. This method could lead to a more efficient way to monitor VCSEL emission.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charlotte Bringer, Veronique Bardinal, Emmanuelle Daran, Thierry Camps, Yann G. Boucher, Guilhem Almuneau, Olivier Gauthier-Lafaye, Pascal Dubreuil, Jean-Baptiste Doucet, and Chantal Fontaine "Detection of lateral spontaneous emission for VCSEL monitoring", Proc. SPIE 5453, Micro-Optics, VCSELs, and Photonic Interconnects, (8 September 2004); https://doi.org/10.1117/12.545568
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Cited by 7 scholarly publications.
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KEYWORDS
Vertical cavity surface emitting lasers

Photodetectors

Optical testing

Waveguides

Quantum wells

Etching

Laser damage threshold

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