A single relaxation-time non-quasi-static model for MESFETs and HEMTs

C. Camacho-Penalosa; T. M. Martin-Guerrero; B. Castillo-Vazquez; Jaime Esteban

doi:10.1117/12.560774

7 April 2004 A single relaxation-time non-quasi-static model for MESFETs and HEMTs

C. Camacho-Penalosa, T. M. Martin-Guerrero, B. Castillo-Vazquez, Jaime Esteban

Proceedings Volume 5445, Microwave and Optical Technology 2003; (2004) https://doi.org/10.1117/12.560774
Event: Microwave and Optical Technology 2003, 2003, Ostrava, Czech Republic

Abstract

A non-quasi-static (NQS) model suitable for simulating the small signal-performance of monolithic MESFET and HEMT devices, which is consistent with a large-signal model, is described. The hallmark of the model is that it incorporates NQS effects not only in the capacitors of the equivalent circuit, but also in the conductances, employing the same relaxation time in both types of elements. A parameter extraction technique which provides a correct identification of parasitic and intrinsic elements is also presented. The single relaxation-time NQS model has been successfully applied to predict the small-signal performance of monolithic MESFET and HEMT devices in the 1 to 40 GHz band at a wide variety of bias conditions. The close agreement obtained between measured and simulated S-parameters at all bias points validates the proposed model and proves that it represents the main devices' behavior aspects.

Citation Download Citation

C. Camacho-Penalosa, T. M. Martin-Guerrero, B. Castillo-Vazquez, and Jaime Esteban "A single relaxation-time non-quasi-static model for MESFETs and HEMTs", Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); https://doi.org/10.1117/12.560774

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