Ultrathin oxide (SiOx) grown on HF-treated silicon

E. T. Paul Benny; J. Majhi

doi:10.1117/12.57010

1 February 1992 Ultrathin oxide (SiO_x) grown on HF-treated silicon

E. T. Paul Benny, J. Majhi

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57010
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Ultrathin tunnel oxides (SiO_x) were grown on silicon, pretreated with 5% hydrofluoric acid, using high pressure, low temperature oxidation. These oxides were characterized using variable illumination current-voltage (V_oc - J_sc) measurements on semi-transparent metal gate MIS diodes. The open circuit voltage (V_oc), short circuit current (J_sc), ideality factor (n) and reverse saturation current (J_o) are studied as a function of oxidation time. The interface state density D_its for the HF treated sample was found to decrease from 2 X 10¹² cm^-2eV^-1 to 9.21 X 10¹¹ cm^-2eV^-1. Highly reproducible, good quality ultrathin oxides were obtained by pre-treatment of the wafer in hydrofluoric acid.

Citation Download Citation

E. T. Paul Benny and J. Majhi "Ultrathin oxide (SiO_x) grown on HF-treated silicon", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57010

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