Paper
15 March 2006 Positive and negative tone double patterning lithography for 50nm flash memory
Chang-Moon Lim, Seo-Min Kim, Young-Sun Hwang, Jae-Seung Choi, Keun-Do Ban, Sung-Yoon Cho, Jin-Ki Jung, Eung-Kil Kang, Hee-Youl Lim, Hyeong-Soo Kim, Seung-Chan Moon
Author Affiliations +
Abstract
Double patterning lithography is very fascinating way of lithography which is capable of pushing down the k1 limit below 0.25. By using double patterning lithography, we can delineate the pattern beyond resolution capability. Target pattern is decomposed into patterns within resolution capability and decomposed patterns are combined together through twice lithography and twice etch processes. Two ways, negative and positive, of doing double patterning process are contrived and studied experimentally. In this paper, various issues in double patterning lithography such as pattern decomposition, resist process on patterned topography, process window of 1/4 pitch patterning, and overlay dependent CD variation are studied on positive and negative tone double patterning respectively. Among various issues about double patterning, only the overlay controllability and productivity seemed to be dominated as visible obstacles so far.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chang-Moon Lim, Seo-Min Kim, Young-Sun Hwang, Jae-Seung Choi, Keun-Do Ban, Sung-Yoon Cho, Jin-Ki Jung, Eung-Kil Kang, Hee-Youl Lim, Hyeong-Soo Kim, and Seung-Chan Moon "Positive and negative tone double patterning lithography for 50nm flash memory", Proc. SPIE 6154, Optical Microlithography XIX, 615410 (15 March 2006); https://doi.org/10.1117/12.656187
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CITATIONS
Cited by 52 scholarly publications and 4 patents.
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KEYWORDS
Double patterning technology

Lithography

Photomasks

Optical lithography

Neodymium

Critical dimension metrology

Etching

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