Poly(4-(1-hydroxyalkyl)styrene based photoresist materials: design, synthesis, and their lithographic performance

Mohammed J. Nasrullah; R. Dhamodharan

doi:10.1117/12.659639

29 March 2006 Poly(4-(1-hydroxyalkyl)styrene based photoresist materials: design, synthesis, and their lithographic performance

Mohammed J. Nasrullah, R. Dhamodharan

Author Affiliations +

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 61532F (2006) https://doi.org/10.1117/12.659639
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Several synthetic approaches are available to make photoresist polymers for deep UV (DUV) lithography. Two approaches were widely used in semiconductor manufacturing: i) direct polymerization of corresponding monomers by (controlled) radical, (living) ionic polymerization ii) thermal or chemical catalyzed deprotection or protection of the macromolecules. The latter approach which is also called polymer modification chemistry (PMC) or polymer analogous chemistry offers several advantageous over the direct polymerization approach. In this presentation, we will provide an overview on the preparation and basic lithographically important characterization of new polymers based on poly(4-(1-hydroxyalkyl)styrene-co-styrene) [Poly(4-HAS-co-S)]. These polymers were synthesized for the first time by PMC and this methodology is an simple alternative for the synthesis of poly(4-HAS-co-S) than conventionally used synthetically challenging free radical or low temperature anionic polymerization of the protected monomer. We have synthesized high and low molecular weight (Mn) polymers with mole fraction of functional group ranging from partial to complete functionalization. Several formulations based on poly(4-HAS-co-S) were developed and tested for negative tone imaging at DUV lithography. Lithographic performance of these polymers at DUV lithography will be compared with their molecular weight and mole fraction of functional groups.

Citation Download Citation

Mohammed J. Nasrullah and R. Dhamodharan "Poly(4-(1-hydroxyalkyl)styrene based photoresist materials: design, synthesis, and their lithographic performance", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532F (29 March 2006); https://doi.org/10.1117/12.659639

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available