Development of advanced reticle inspection apparatus for hp 65 nm node device and beyond

Nobutaka Kikuiri; Shingo Murakami; Hideo Tsuchiya; Motonari Tateno; Kenichi Takahara; Shinichi Imai; Ryoichi Hirano; Ikunao Isomura; Yoshitake Tsuji; Yukio Tamura; Kenichi Matsumura; Kinya Usuda; Masao Otaki; Osamu Suga; Katsumi Ohira

doi:10.1117/12.683579

19 May 2006 Development of advanced reticle inspection apparatus for hp 65 nm node device and beyond

Nobutaka Kikuiri, Shingo Murakami, Hideo Tsuchiya, Motonari Tateno, Kenichi Takahara, Shinichi Imai, Ryoichi Hirano, Ikunao Isomura, Yoshitake Tsuji, Yukio Tamura, Kenichi Matsumura, Kinya Usuda, Masao Otaki, Osamu Suga, Katsumi Ohira

Author Affiliations +

Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62830Y (2006) https://doi.org/10.1117/12.683579
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan

Abstract

The usage of ArF immersion lithography for hp 65nm node and beyond leads to the increase of mask error enhancement factor in the exposure process. Wavelength of inspection tool is required to consistent with wavelength of lithography tool. Wavelength consistency becomes more important by the introduction of phase shift mask such as Tri-tone mask and alternating phase shift mask. Therefore, mask inspection system, whose inspection light wavelength is 199nm, has been developed. This system has transmission and reflection inspection mode, and throughput, using 70 nm pixel size, were designed within 2hours per mask. The experimental results show expected advantages for Die-to-Die and Die-to-Database inspection compared with the system using 257nm inspection optics. Shorter wavelength effect makes transmission inspection sensitivity increase, and realizes 40nm size particle inspection. As for the phase shift mask, the difference of gray value between the area with phase defect and without phase defect was clear relatively. In this paper, specifications and design, experimental results are described.

Citation Download Citation

Nobutaka Kikuiri, Shingo Murakami, Hideo Tsuchiya, Motonari Tateno, Kenichi Takahara, Shinichi Imai, Ryoichi Hirano, Ikunao Isomura, Yoshitake Tsuji, Yukio Tamura, Kenichi Matsumura, Kinya Usuda, Masao Otaki, Osamu Suga, and Katsumi Ohira "Development of advanced reticle inspection apparatus for hp 65 nm node device and beyond", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62830Y (19 May 2006); https://doi.org/10.1117/12.683579

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available