Fast nondestructive optical measurements of critical dimension uniformity and linearity on AEI and ASI phase-shift masks

Alexander Gray; John C. Lam

doi:10.1117/12.686150

20 October 2006 Fast nondestructive optical measurements of critical dimension uniformity and linearity on AEI and ASI phase-shift masks

Alexander Gray, John C. Lam

Author Affiliations +

Proceedings Volume 6349, Photomask Technology 2006; 63491O (2006) https://doi.org/10.1117/12.686150
Event: SPIE Photomask Technology, 2006, Monterey, California, United States

Abstract

The fabrication of a production-worthy phase shift mask requires, among other things, excellent uniformity of critical dimensions (trench width and depth) and optical properties of the phase shift material (MoSi). Traditionally, CD-SEM has been the instrument of choice for the measurement of width; AFP (Atomic Force Profilometer) or conventional profilometer for the measurement of depth; and Interferometer for the measurement of phase shift and transmittance of the phase shift material. We present an innovative optical metrology solution based on broadband reflectometry, covering a wavelength range from 190 to 1000 nm, in one nanometer intervals. The analysis is performed using Forouhi-Bloomer dispersion equations, in conjunctions with Rigorous Coupled Wave Analysis (RCWA). The method provides accurate and repeatable results for critical dimensions, thickness, and optical properties (n and k spectra from 190 - 1000 nm) for all materials present in the structure. In the current study, the method described above was used to examine photomasks at two stages of mask manufacturing process: After Etch Inspection (AEI) and After Strip Inspection (ASI). The results were compared with the measurements taken on the same samples using conventional CD-SEM. Two comparison studies were conducted - global CD uniformity and CD linearity. The CD linearity study demonstrated excellent correlation between the values of grating line width obtained using this new optical reflectometry approach and a CD-SEM for the grating structures of two pitches (760 nm and 1120 nm). The global CD uniformity study revealed that this presented reflectometry method can be used to produce CD uniformity maps which demonstrate excellent correlation with the results obtained using a conventional CD-SEM. The advantages of the optical method are high throughput, non-destructive nature of the measurements and capability to measure a wider variety of structures pertinent to the photomask manufacturing process.

Citation Download Citation

Alexander Gray and John C. Lam "Fast nondestructive optical measurements of critical dimension uniformity and linearity on AEI and ASI phase-shift masks", Proc. SPIE 6349, Photomask Technology 2006, 63491O (20 October 2006); https://doi.org/10.1117/12.686150

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available