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4 April 2007 Metrology challenges of double exposure and double patterning
William H. Arnold, Mircea Dusa, Jo Flinders
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Proceedings Volume 6518, Metrology, Inspection, and Process Control for Microlithography XXI; 651802 (2007) https://doi.org/10.1117/12.721459
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States
Abstract
Double patterning has emerged as a likely lithography technology to bridge the gap between water-based ArF immersion lithography and EUV. Water immersion, single exposure lithography is limited to about 40nm half pitch with NA 1.35. Extension of immersion with high index fluids and glasses is theoretically possible, but faces severe challenges in technology, economics, and timing. In order to extend water immersion lithography further, much attention is given to reducing effective k1 to less than 0.25 using double patterning. This paper explores the unique challenges IC metrology faces to enable double patterning, first in development, then in production.
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William H. Arnold, Mircea Dusa, and Jo Flinders "Metrology challenges of double exposure and double patterning", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 651802 (4 April 2007); https://doi.org/10.1117/12.721459
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Cited by 10 scholarly publications and 1 patent.
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KEYWORDS
Double patterning technology
Lithography
Overlay metrology
Metrology
Optical lithography
Semiconducting wafers
Photomasks
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