PDL oxide enabled pitch doubling

Nader Shamma; Wen-Ben Chou; Ilia Kalinovski; Don Schlosser; Tom Mountsier; Collin Mui; Raihan Tarafdar; Bart van Schravendijk

doi:10.1117/12.771514

12 March 2008 PDL oxide enabled pitch doubling

Nader Shamma, Wen-Ben Chou, Ilia Kalinovski, Don Schlosser, Tom Mountsier, Collin Mui, Raihan Tarafdar, Bart van Schravendijk

Author Affiliations +

Proceedings Volume 6924, Optical Microlithography XXI; 69240D (2008) https://doi.org/10.1117/12.771514
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

A double patterning (DP) process is introduced with application for advanced technology nodes. This DP technique is enabled by a novel low-temperature pulsed deposition layer (PDL^TM) oxide film which is deposited directly on patterned photoresist. In this article, we will report the results of fabrication of sub-50nm features on a 100nm pitch by the PDL-spacer DP process using 0.85 NA dry ArF lithography. This result represents the potential of the PDL-based DP to significantly enhance the resolution of the patterning process beyond the limits of optical lithography. Components of CD variance for this spacer DP scheme will be discussed.

Citation Download Citation

Nader Shamma, Wen-Ben Chou, Ilia Kalinovski, Don Schlosser, Tom Mountsier, Collin Mui, Raihan Tarafdar, and Bart van Schravendijk "PDL oxide enabled pitch doubling", Proc. SPIE 6924, Optical Microlithography XXI, 69240D (12 March 2008); https://doi.org/10.1117/12.771514

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