HgCdTe APD- focal plane array development at CEA Leti-Minatec

Johan Rothman; Gwladys Perrais; Eric De Borniol; Pierre Castelein; Nicholas Baier; Fabrice Guellec; Michael Tchagaspanian; Philippe Ballet; Laurent Mollard; Sylvain Gout; André Perez; Maryse Fournier; Jean-Paul Chamonal; Philippe M. Tribolet; Gerard Destefanis

doi:10.1117/12.780447

5 May 2008 HgCdTe APD- focal plane array development at CEA Leti-Minatec

Johan Rothman, Gwladys Perrais, Eric De Borniol, Pierre Castelein, Nicholas Baier, Fabrice Guellec, Michael Tchagaspanian, Philippe Ballet, Laurent Mollard, Sylvain Gout, André Perez, Maryse Fournier, Jean-Paul Chamonal, Philippe M. Tribolet, Gerard Destefanis

Author Affiliations +

Proceedings Volume 6940, Infrared Technology and Applications XXXIV; 69402N (2008) https://doi.org/10.1117/12.780447
Event: SPIE Defense and Security Symposium, 2008, Orlando, Florida, United States

Abstract

We report the latest developments of MW HgCdTe electron initiated avalanche photo-diodes (e-APDs) focal plane arrays (FPAs) at CEA-LETI. The MW e-APD FPAs are developed in view of ultra-sensitive high dynamic range passive starring arrays, active 2D/3D and dual-mode passive-active imaging, which is why both the passive imaging performance and the gain characteristics of the APDs are of interest. A passive mode responsivity operability of 99.9% was measured in LPE and MBE e-APDs FPAs associated with an average NETD=12mK, demonstrating that dual mode passive-active imaging can be achieved with LETI e-APDs without degradation in the passive imaging performance. The gain and sensitivity performances were measured in test arrays and using a low voltage technology (3.3V) CTIA test pixel designed for 3D active imaging. The CTIA and test arrays measurements yielded comparable results in terms of bias gain dependence (M=100 at V_b=-7V), low excess noise factor (=1.2) and low equivalent input current (I_{eq_in}<1pA). These results validated the low voltage CTIA approach for integrating the current from a HgCdTe e-APD under high bias. The test array measurements demonstrated a relative dispersion below 2% in both MBE and LPE e- APDs for gains higher than M>100, associated with an operability of 99%. The operability at I_{eq_in}<1pA at M=30 was 95%. A record low value of Ieq_in=1fA was estimated in the MBE e-APDs at M=100, indicating the potential for using the MW e-APDs for very low flux applications. The high potential of the MW e-APDS for active imaging was demonstrated by impulse response measurements which yielded a typical rise time lower than 100ps and diffusion limited fall time of 900ps to 5ns, depending on the pixel pitch. This potential was confirmed by the demonstration of a 2ns time of flight (TOF) resolution in the CTIA e-APD 3D pixel. The combined photon and dark current induced equivalent back ground noise at f/8 with a cold band pass filter at λ=1.55μm was 2 electrons rms for an integration time of 50ns.

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Johan Rothman, Gwladys Perrais, Eric De Borniol, Pierre Castelein, Nicholas Baier, Fabrice Guellec, Michael Tchagaspanian, Philippe Ballet, Laurent Mollard, Sylvain Gout, André Perez, Maryse Fournier, Jean-Paul Chamonal, Philippe M. Tribolet, and Gerard Destefanis "HgCdTe APD- focal plane array development at CEA Leti-Minatec", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69402N (5 May 2008); https://doi.org/10.1117/12.780447

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