Paper
25 September 2009 Advances in spatial and spectral brightness in 800-1100 nm GaAs-based high power broad area lasers
P. Crump, H. Wenzel, G. Erbert, G. Tränkle
Author Affiliations +
Proceedings Volume 7483, Technologies for Optical Countermeasures VI; 74830B (2009) https://doi.org/10.1117/12.829617
Event: SPIE Security + Defence, 2009, Berlin, Germany
Abstract
High power broad area diode lasers generate the optical energy in all high performance, high power laser systems, either directly or as pump sources for fiber or solid state lasers. Advances in the spectral and spatial brightness of these diode lasers are essential for further increases in system performance. Recent development work at the Ferdinand-Braun- Institut für Höchstfrequenztechnik has lead to significant improvements in diode laser performance. Our ongoing broad area laser research programs, for example, seek to increase the peak reliable output power (in CW, QCW and short pulse regimes), minimize the vertical and lateral far field emission angles, narrow the spectral line width of the emission and increase the power conversion efficiency. Wavelengths between 800 nm and 1100 nm were investigated, with development work focused on specific applications. We present a summary of this research and discuss how performance can be further improved.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Crump, H. Wenzel, G. Erbert, and G. Tränkle "Advances in spatial and spectral brightness in 800-1100 nm GaAs-based high power broad area lasers", Proc. SPIE 7483, Technologies for Optical Countermeasures VI, 74830B (25 September 2009); https://doi.org/10.1117/12.829617
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Cited by 3 scholarly publications.
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KEYWORDS
Semiconductor lasers

Continuous wave operation

Diodes

Broad area laser diodes

High power lasers

Charged particle optics

Fiber lasers

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