Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection

Binh-Minh Nguyen; Siamak Abdollahi Pour; Simeon Bogdanov; Manijeh Razeghi

doi:10.1117/12.855635

22 January 2010 Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection

Binh-Minh Nguyen, Siamak Abdollahi Pour, Simeon Bogdanov, Manijeh Razeghi

Author Affiliations +

Proceedings Volume 7608, Quantum Sensing and Nanophotonic Devices VII; 760825 (2010) https://doi.org/10.1117/12.855635
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

The bandstructure tunability of Type II antimonide-based superlattices has been significantly enhanced since the introduction of the M-structure superlattice, resulting in significant improvements of Type II superlattice infrared detectors. By using M-structure, we developed the pMp design, a novel infrared photodetector architecture that inherits the advantages of traditional photoconductive and photovoltaic devices. This minority electron unipolar device consists of an M-structure barrier layer blocking the transport of majority holes in a p-type semiconductor, resulting in an electrical transport due to minority carriers with low current density. Applied for the very long wavelength detection, at 77K, a 14μm cutoff detector exhibits a dark current 3.3 mA/cm², a photoresponsivity of 1.4 A/W at 50mV bias and the associated shot-noise detectivity of 4x10¹⁰ Jones.

Citation Download Citation

Binh-Minh Nguyen, Siamak Abdollahi Pour, Simeon Bogdanov, and Manijeh Razeghi "Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 760825 (22 January 2010); https://doi.org/10.1117/12.855635

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