Development of radiation hard semiconductor sensors for charged particle tracking at very high luminosities

Christopher Betancourt; Vitaliy Fadeyev; Hartmut F.-W. Sadrozinski; John Wright

doi:10.1117/12.862590

15 September 2010 Development of radiation hard semiconductor sensors for charged particle tracking at very high luminosities

Christopher Betancourt, Vitaliy Fadeyev, Hartmut F.-W. Sadrozinski, John Wright

Author Affiliations +

Proceedings Volume 7817, Nanophotonics and Macrophotonics for Space Environments IV; 78170J (2010) https://doi.org/10.1117/12.862590
Event: SPIE Optical Engineering + Applications, 2010, San Diego, California, United States

Abstract

The RD50 collaboration (sponsored by the European Organization for Nuclear Research CERN) has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 10¹⁶ 1 MeV neutron equivalent (n_eq) cm⁻². This is much larger than typical fluences in space, but is mainly limited to displacement and total dose damage, without the single-event effects typical for the space environment. RD50 investigates radiation hardening from many angles, including: Search for alternative semiconductor to replace silicon, improvement of the intrinsic tolerance of the substrate material (p- vs. n-type, initial doping concentration, oxygen concentration), optimization of the readout geometry (collection of holes or electrons, surface treatment), novel detector designs (3D, edge-less, interconnects).

Citation Download Citation

Christopher Betancourt, Vitaliy Fadeyev, Hartmut F.-W. Sadrozinski, and John Wright "Development of radiation hard semiconductor sensors for charged particle tracking at very high luminosities", Proc. SPIE 7817, Nanophotonics and Macrophotonics for Space Environments IV, 78170J (15 September 2010); https://doi.org/10.1117/12.862590

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KEYWORDS

Sensors

Silicon

Particles

Resistance

Semiconductors

Electrons

Capacitance

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