Paper
22 March 2011 Choosing objective functions for inverse lithography patterning
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Abstract
Inverse lithography which generates model-based patterns theoretically has superior patterning fidelity comparing to conventional rule-based technique. Cost functions are the determinant of performance inverse lithography that is also an optimization problem. However, the design and know-how of cost functions have rarely been discussed. In this paper, we investigate the impacts of various cost functions and their superposition for inverse lithography patterning exploiting a steepest descent algorithm. We research the most generally used objective functions, which are the resist and aerial images, and also deliver a derivation for the aerial image contrast. We then discuss the pattern fidelity and final mask characteristics for simple layouts with a single isolated contact and two nested contacts. Moreover, the convergences which are expressed by edge-placement error (EPE) and contrast versus iteration numbers rapidly attain to steady sate in most hybrid cost functions. All in all, we conclude that a cost function composed of a dominant resist-image component and a minor aerial-image or image-contrast component can carry out a good mask correction and contour targets when using inverse lithography patterning.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jue-Chin Yu and Peichen Yu "Choosing objective functions for inverse lithography patterning", Proc. SPIE 7973, Optical Microlithography XXIV, 79731N (22 March 2011); https://doi.org/10.1117/12.879440
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Cited by 6 scholarly publications.
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KEYWORDS
Photomasks

Optical lithography

Lithography

Optical proximity correction

Photoresist materials

SRAF

Superposition

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