Paper
17 January 2011 Hybrid silicon lasers
Günther Roelkens, Yannick De Koninck, Shahram Keyvaninia, Stevan Stankovic, Martijn Tassaert, Marco Lamponi, Guanghua Duan, Dries Van Thourhout, Roel Baets
Author Affiliations +
Proceedings Volume 7942, Optoelectronic Integrated Circuits XIII; 79420D (2011) https://doi.org/10.1117/12.880089
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
Hybrid silicon lasers based on bonded III-V layers on silicon are discussed with respect to the challenges and trade-offs in their design and fabrication. Focus is on specific designs that combine good light confinement in the gain layer with good spectral control provided by grating structures patterned in silicon.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Günther Roelkens, Yannick De Koninck, Shahram Keyvaninia, Stevan Stankovic, Martijn Tassaert, Marco Lamponi, Guanghua Duan, Dries Van Thourhout, and Roel Baets "Hybrid silicon lasers", Proc. SPIE 7942, Optoelectronic Integrated Circuits XIII, 79420D (17 January 2011); https://doi.org/10.1117/12.880089
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Cited by 16 scholarly publications and 1 patent.
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KEYWORDS
Silicon

Waveguides

Semiconductor lasers

Semiconducting wafers

Hybrid silicon lasers

Laser resonators

Wafer bonding

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