Self-assembly patterning for sub-15nm half-pitch: a transition from lab to fab

Chris Bencher; Jeffrey Smith; Liyan Miao; Cathy Cai; Yongmei Chen; Joy Y. Cheng; Daniel P. Sanders; Melia Tjio; Hoa D. Truong; Steven Holmes; William D. Hinsberg

doi:10.1117/12.881293

2 April 2011 Self-assembly patterning for sub-15nm half-pitch: a transition from lab to fab

Chris Bencher, Jeffrey Smith, Liyan Miao, Cathy Cai, Yongmei Chen, Joy Y. Cheng, Daniel P. Sanders, Melia Tjio, Hoa D. Truong, Steven Holmes, William D. Hinsberg

Author Affiliations +

Proceedings Volume 7970, Alternative Lithographic Technologies III; 79700F (2011) https://doi.org/10.1117/12.881293
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Directed self-assembly is an emerging technology that to-date has been primarily driven by research efforts in university and corporate laboratory environments. Through these environments, we have seen many promising demonstrations of forming self-assembled structures with small half pitch (<15 nm), registration control, and various device-oriented shapes. Now, the attention turns to integrating these capabilities into a 300mm pilot fab, which can study directed selfassembly in the context of a semiconductor fabrication environment and equipment set. The primary aim of this study is to create a 300mm baseline process of record using a 12nm half-pitch PS-b-PMMA lamellae block copolymer in order to establish an initial measurement of the defect density due to inherent polymer phase separation defects such as dislocations and disclinations.

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Chris Bencher, Jeffrey Smith, Liyan Miao, Cathy Cai, Yongmei Chen, Joy Y. Cheng, Daniel P. Sanders, Melia Tjio, Hoa D. Truong, Steven Holmes, and William D. Hinsberg "Self-assembly patterning for sub-15nm half-pitch: a transition from lab to fab", Proc. SPIE 7970, Alternative Lithographic Technologies III, 79700F (2 April 2011); https://doi.org/10.1117/12.881293

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