Spectroscopy of a deterministic single-donor device in silicon

M. Fuechsle; J. A. Miwa; S. Mahapatra; H. Ryu; S. Lee; O. Warschkow; L. C. L. Hollenberg; G. Klimeck; M. Y. Simmons

doi:10.1117/12.919763

4 May 2012 Spectroscopy of a deterministic single-donor device in silicon

M. Fuechsle, J. A. Miwa, S. Mahapatra, H. Ryu, S. Lee, O. Warschkow, L. C. L. Hollenberg, G. Klimeck, M. Y. Simmons

Proceedings Volume 8400, Quantum Information and Computation X; 840006 (2012) https://doi.org/10.1117/12.919763
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

We present a single electron transistor (SET) based on an individual phosphorus dopant atom in an epitaxial silicon environment. Using scanning tunneling microscope (STM) hydrogen lithography, the single impurity is deterministically placed with a spatial accuracy of ± 1 lattice site within a donor-based transport device. Low temperature transport measurements confirm the presence of the single donor and show that the donor charge state can be precisely controlled via gate voltages. We observe a charging energy that is remarkably similar to the value expected for isolated P donors in bulk silicon, which is in sharp contrast to previous experiments on single-dopant transport devices. We show that atomistic modeling can fully capture the effects of the highly-doped transport electrodes on the electronic states of the donor, thus highlighting the high level of control over the electrostatic device properties afforded by a deterministic single donor architecture. Our fabrication method therefore opens the door for the realization of a scalable donor-based qubit architecture in silicon.

Citation Download Citation

M. Fuechsle, J. A. Miwa, S. Mahapatra, H. Ryu, S. Lee, O. Warschkow, L. C. L. Hollenberg, G. Klimeck, and M. Y. Simmons "Spectroscopy of a deterministic single-donor device in silicon", Proc. SPIE 8400, Quantum Information and Computation X, 840006 (4 May 2012); https://doi.org/10.1117/12.919763

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