An Application Of Focused Ion Beams To Electron Beam Testing Of Integrated Circuits

J Puretz; J Orloff; L Swanson

doi:10.1117/12.942318

18 June 1984 An Application Of Focused Ion Beams To Electron Beam Testing Of Integrated Circuits

J Puretz, J Orloff, L Swanson

Proceedings Volume 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III; (1984) https://doi.org/10.1117/12.942318
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

One of the applications of high current density, focused ion beams (FIB) that has been made possible by the advent of the liquid metal ion source (LMIS) is milling of micron sized structures. In this study we examine the prospect of using a FIB system to selectively remove the passivation layer from IC's in order to carry out quantitative voltage contrast measurements on the conductors thus exposed.

Citation Download Citation

J Puretz, J Orloff, and L Swanson "An Application Of Focused Ion Beams To Electron Beam Testing Of Integrated Circuits", Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); https://doi.org/10.1117/12.942318

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