Application Of Ghost Proximity Effect Correction Method To Conventional And Nonswelling Negative E-Beam Resists

Huayu Liu; E. D. Liu

doi:10.1117/12.963691

30 June 1986 Application Of Ghost Proximity Effect Correction Method To Conventional And Nonswelling Negative E-Beam Resists

Huayu Liu, E. D. Liu

Author Affiliations +

Proceedings Volume 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V; (1986) https://doi.org/10.1117/12.963691
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

The proximity effect in electron-beam lithography can be corrected by the "GHOST" method, in which an additional field exposure with defocused beam at lower dose is used to compensate proximity effect. This technique was applied to CMS-EX(R) and RD-2000N negative resist successfully. Excellent linewidth control was confirmed by an electrical test method. A parameter of development rate ratio was used to characterize the performance of nonswelling negative resist.

Citation Download Citation

Huayu Liu and E. D. Liu "Application Of Ghost Proximity Effect Correction Method To Conventional And Nonswelling Negative E-Beam Resists", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963691

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