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Structural study of thermal-oxide films on silicon by cathodoluminescence

  • Semiconductors and Insulators
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Abstract

A study of cathodoluminescence spectra of silicon oxide films grown thermally on silicon is reported. It has been established that the cathodoluminescence properties of thermal films are nonuniform in depth and depend on the growth conditions and characteristics of the silicon substrate.

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References

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    M. V. Zamoryanskaya & V. I. Sokolov

Authors
  1. M. V. Zamoryanskaya
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  2. V. I. Sokolov
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Fiz. Tverd. Tela (St. Petersburg) 40, 1984–1989 (November 1998)

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Zamoryanskaya, M.V., Sokolov, V.I. Structural study of thermal-oxide films on silicon by cathodoluminescence. Phys. Solid State 40, 1797–1801 (1998). https://doi.org/10.1134/1.1130659

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  • DOI: https://doi.org/10.1134/1.1130659

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