Abstract
Expressions for the photoelastic constants are obtained on the basis of an analogy between the photoelastic and elastic properties of semiconductor crystals. Calculations were performed for wide-gap semiconductors (silicon carbide and boron, aluminum, and gallium nitrides) with sphalerite and wurtzite structures. The quadratic permittivity is also calculated for hexagonal structures.
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Fiz. Tekh. Poluprovodn. 31, 823–824 (July 1997)
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Davydov, S.Y., Tikhonov, S.K. Photoelasticity and quadratic permittivity of wide-gap semiconductors. Semiconductors 31, 698–699 (1997). https://doi.org/10.1134/1.1187069
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DOI: https://doi.org/10.1134/1.1187069