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Electron-hole scattering in p-type silicon with a low charge-carrier injection level

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Abstract

A previously proposed method for determining the parameters of electron-hole scattering in indirect-gap semiconductors is used to investigate the properties of p-type silicon. Diode n +-p-p + structures were used for the measurements. The results obtained by us indicate that complete dragging of the minority electrons by the majority holes is possible, even at room temperature, in p-type material with doping levels N>1018 cm−3.

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Authors and Affiliations

  1. V. I. Lenin All-Russia Electrical Engineering Institute, 111250, Moscow, Russia

    T. T. Mnatsakanov & L. I. Pomortseva

  2. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    V. B. Shuman

Authors
  1. T. T. Mnatsakanov
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  2. L. I. Pomortseva
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  3. V. B. Shuman
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Additional information

Fiz. Tekh. Poluprovodn. 31, 833–835 (July 1997

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Mnatsakanov, T.T., Pomortseva, L.I. & Shuman, V.B. Electron-hole scattering in p-type silicon with a low charge-carrier injection level. Semiconductors 31, 707–709 (1997). https://doi.org/10.1134/1.1187072

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  • DOI: https://doi.org/10.1134/1.1187072

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