Abstract
The DLTS and Van der Pauw methods are used to investigate the production of E c −0.37 eV centers responsible for the formation of high-resistivity layers in n-type Si irradiated with electrons and annealed in the temperature range 80–320 °C. An analysis of the experimental data leads to a conclusion as to the composition of the E c −0.37 eV centers ([V-O-C]) and to the conclusion that their formation is stimulated by a flux of interstitial atoms away from the interface into the interior of the semiconductor during annealing accompanied by the reactions: 1) I+Cs→Ci,Ci+[V-O]→[V-O-C] (dominant reaction); 2) I+V 2→V,V+[C-O]→[V-O-C].
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Fiz. Tekh. Poluprovodn. 31, 993–997 (August 1997)
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Naumova, O.V., Smirnov, L.S. & Stas’, V.F. Nature of E c −0.37 eV centers and the formation of high-resistivity layers in n-type silicon. Semiconductors 31, 847–851 (1997). https://doi.org/10.1134/1.1187266
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DOI: https://doi.org/10.1134/1.1187266